Lead-Free and PbSn Bump Electromigration Testing

نویسندگان

  • Stephen Gee
  • Nikhil Kelkar
  • Joanne Huang
چکیده

As the electronics industry continues to push for miniaturization, several reliability factors become vital issues. The demand for a high population of smaller and smaller solder bumps, while also increasing the current, have resulted in a significant increase in the current density. As outlined in the International Technology of Roadmap for Semiconductors (ITRS), this trend makes electromigration the limiting factor in high density packages. The heightened current density and correspondingly elevated operating temperatures are a critical issue in reliability since these factors facilitate the effects of electromigration. Therefore, as bump sizes continue to decrease, the study of electromigration reliability becomes crucial in order to understand and possibly prevent the causes of failure. A systematic study of electromigration in eutectic SnPb and Pb-free solder bumps was conducted in order to characterize the reliability of the Micro SMD package family. The testing includes both eutectic 63Sn-37Pb and 95.5Sn-4.0Ag-0.5Cu solder bumps on an Al/Ni(V)/Cu under-bump-metallization. Meantime to failure results are compared to Black's Equation and cross-sections of the solder bumps are shown to analyze the mechanisms that led to failure.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Concurrent electromigration and creep in lead-free solder

When electric current flows in a solder bump, electromigration generates stress, but creep relaxes it. After some time, the bump develops a steady-state stress field. We present a theory to show that the two processes — electromigration and creep — set an intrinsic length. When the intrinsic length is large compared to the height of the bump, electromigration is fast relative to creep and the s...

متن کامل

Electromigration enhanced intermetallic growth and void formation in Pb-free solder joints

A kinetic analysis was formulated for electromigration enhanced intermetallic evolution of a Cu–Sn diffusion couple in the Sn-based Pb-free solder joints with Cu under bump metallurgy. The simulated diffusion couple comprised the two terminal phases, Cu and Sn, as well as the two intermetallic phases, Cu3Sn and Cu6Sn5, formed between them. The diffusion and electromigration parameters were obta...

متن کامل

Electromigration Performance of Wlcsp Solder Joints

Wafer Level Chip Scale Package (WLCSP) assemblies were tested under high temperature and high current conditions. Electromigration damage was observed along with accelerated diffusion and intermetallic compound growth at the solder / Under Bump Metallization (UBM) interface. Final electrical failure typically occurred due to a void created in the redistribution line (RDL) near the UBM. The fail...

متن کامل

The Microstructure and Crystal Orientation of Sn-Ag and Sn-Cu Solders Affected by their Interfacial Reactions with Cu and Ni(P)

Recently, it has been reported that the crystal orientation and grain size of the β-Sn phase in Sn-rich solders have profound effects on the reliabilities of Pb-free solder joints, such as thermo-mechanical fatigue, electromigration, and among others. Additionally, it is also known that the microstructure of Sn-rich solders is strongly affected by their alloy composition. In this study, the gra...

متن کامل

Single Pin Redundancy for Robust Power Grid Delivery

C4 bumps are susceptible to electromigration failure due to large power-supply currents. Electromigration failure is exacerbated by manufacturing variability, which increases bump resistance and consequently the current draw in neighboring bumps. A typical solution entails adding redundant bumps while guard-banding the maximum current per bump. Instead, we propose a mixed-integer linear program...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005